Model：ABB 5SHX2645L0002 IGCT | 5SHY 55L4520 High-Power Semiconductor Module

Brand: ABB
Price range (USD): 2000-3000
Country: Sweden
Parameter: Warranty： 365 days
Quality: Original module
Condition： New / Used
Warehouse: Spot
Delivery time: Shipped in 3 days after payment
Mailbox：sales5@xrjdcs.com

ABB 5SHX2645L0002 / 5SHY 55L4520 IGCT Module

ABB 5SHX2645L0002 / 5SHY 55L4520 Asymmetric IGCT

High-performance Integrated Gate-Commutated Thyristor for the most demanding medium-voltage applications in industrial drives and power conversion systems.

Key Features

High Voltage Rating (4500V)
Robust Press-Pack Design
Low Conduction Losses
High Short-Circuit Ruggedness
Double-Side Cooling
Industrial Grade Reliability

1. Product Overview

The ABB 5SHX2645L0002, also known by technical type number 5SHY 55L4520, is an advanced Asymmetric Integrated Gate-Commutated Thyristor (IGCT) designed for high-power, medium-voltage applications. This semiconductor device combines the low conduction loss of a thyristor with the fast switching capability of a gate-controlled device, making it ideal for demanding industrial environments.

Product Type: Asymmetric Integrated Gate-Commutated Thyristor (IGCT)

ABB Ordering Code: 5SHX2645L0002

Technical Type: 5SHY 55L4520

Core Function: High-power switching in medium-voltage converters

2. Technical Specifications

Parameter	Specification	Details
Device Type	Asymmetric IGCT	Standard asymmetric design for use with anti-parallel diodes
Voltage Rating (V_DRM)	4500 V	Maximum repetitive off-state voltage
Maximum Turn-Off Current (I_TGQM)	High Current Capability	Designed for high-power applications requiring robust performance
Housing Type	Press-Pack	Standard housing for double-side cooling and mechanical robustness
Technology	Advanced IGCT Platform	Optimized for minimal conduction loss and maximum ruggedness
Operating Temperature	-40°C to +125°C	Wide operating temperature range for industrial environments

3. Product Features

Exceptional Efficiency

The thyristor-based core provides extremely low conduction losses, leading to higher system efficiency and significantly reduced operating costs, especially at high power levels.

Proven Ruggedness

IGCT technology offers high short-circuit withstand capability and immunity to dv/dt and di/dt stresses, ensuring stable operation in harsh electrical environments with voltage transients.

Compact Power Density

The ability to handle high currents and voltages in a single device enables more compact and simplified converter designs compared to alternative technologies, saving valuable space.

Reliable Press-Pack Housing

The press-pack design facilitates double-side cooling for superior thermal performance, offers excellent thermal cycling capability, and features non-catastrophic failure modes for enhanced system safety.

Performance characteristics of the 5SHX2645L0002 IGCT

4. Applications

This IGCT is engineered for critical, high-power infrastructure and industrial applications where maximum reliability, efficiency, and uptime are essential for operational success.

ABB 5SHX1060H0003 5SHY 35L4510 Datasheet Summary.pdf

8d4654be7eb449ce52e608fb817e8e09.pdf (158.58 KB)

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