Model：ABB 5SHX1060H0003 IGCT | 5SHY 35L4510 4500V High-Power Switch

Brand: ABB
Price range (USD): 2000-3000
Country: Sweden
Parameter: Device Type :Asymmetric IGCT
Voltage Rating (V_DRM) :4500 V
Maximum Turn-Off Current (I_TGQM) :4180 A
On-State Voltage (V_TM) :Low

ABB 5SHX1060H0003 (5SHY 35L4510) Asymmetric IGCT

The ABB 5SHX1060H0003, also known by part number 5SHY 35L4510, is a high-performance Asymmetric Integrated Gate-Commutated Thyristor (IGCT). This robust power semiconductor is engineered for the most demanding medium-voltage applications, offering unparalleled efficiency and reliability in high-power conversion systems like industrial drives and power quality solutions.

1. Product Overview

The ABB 5SHX1060H0003 is a key component in modern power electronics. As an Asymmetric IGCT, it combines the low conduction loss of a thyristor with the hard-driven, fast-switching capability of a gate-controlled device. It is designed to function as an efficient and ultra-reliable switch in voltage source inverters, enabling precise control of large amounts of electrical power.

Product Type: Asymmetric Integrated Gate-Commutated Thyristor (IGCT)
Alternate Part Number: 5SHY 35L4510
Core Function: High-power, high-frequency switching in multi-level medium-voltage converters.
Technology: Advanced IGCT technology, optimized for minimal conduction loss and maximum ruggedness.

2. Technical Specifications

The following table outlines the key electrical and mechanical parameters of the 5SHX1060H0003 IGCT.

Parameter	Specification	Details
Device Type	Asymmetric IGCT	Standard asymmetric design for use with anti-parallel diodes.
Voltage Rating (V<sub>DRM</sub>)	4500 V	Maximum repetitive off-state voltage.
Maximum Turn-Off Current (I<sub>TGQM</sub>)	4180 A	Peak controllable turn-off current, indicating high power handling.
On-State Voltage (V<sub>TM</sub>)	Low	Typical low thyristor voltage drop, ensuring high efficiency.
Housing	Press-Pack	Standard housing for double-side cooling and mechanical robustness.

3. Product Features

The 5SHX1060H0003 incorporates several design innovations that contribute to its superior performance in the field.

Exceptional Efficiency: The thyristor-based core provides extremely low conduction losses (V<sub>TM</sub>), leading to higher system efficiency and reduced operating costs, especially at high power levels.
Proven Ruggedness: IGCTs are renowned for their high short-circuit withstand capability and immunity to dv/dt and di/dt stresses, ensuring stable operation in harsh electrical environments.
Compact Power Density: The ability to handle very high currents and voltages in a single device allows for more compact and simplified converter designs compared to alternative technologies.
Reliable Press-Pack Housing: The press-pack design facilitates double-side cooling for superior thermal performance, offers excellent thermal cycling capability, and features a non-catastrophic failure mode, enhancing system safety.

4. Applications

This IGCT is built for critical, high-power infrastructure and industrial applications where downtime is not an option.

Medium-Voltage AC Drives: A core component in high-power drive systems for controlling large motors in fans, pumps, compressors, and conveyors.
Industrial Sectors: Ideal for use in metals, mining, cement, oil & gas, and marine propulsion.
Power Quality Solutions: Used in advanced power electronic systems such as Static Synchronous Compensators (STATCOMs) for grid voltage stabilization.
Custom Power Converters: Employed in high-power test benches and specialized industrial power supplies.